BiBurst Laser Mode Ablates Silicon 4.5 Times Faster than Single-Pulse Mode
Scientists working on laser applications have developed a new technique using BiBurst mode, for high-efficiency and high-quality ablation of silicon.
The team has demonstrated that the BiBurst mode can ablate silicon at a volume rate 4.5 times faster than the single-pulse mode with better ablation quality when delivering the same amount of total laser energy used in the process.
Their paper describes the experimental setup of the laser as follows:
The main element of the experimental setup was the femtosecond laser system with BiBurst mode capability. The laser system (PHAROS from Light Conversion) delivered femtosecond laser pulses with a pulse duration of 220 fs at a near-infrared wavelength of 1030 nm. Yb active medium generated the laser pulses. Thanks to the pulse picking capabilities of the system, the laser pulses were provided at tunable repetition rates up to 1 MHz, reaching a maximum output power of 10 W.
Laser pulses supplied by the femtosecond laser system propagated through some elements in the experimental setup, shown in the figure above, until reaching the material sample to be processed. A part of the beam was reflected at a beam splitter and directed along the laser path to an ultrafast photodiode connected to an oscilloscope for imaging the temporal profile of the laser pulses grouped in bursts.
BiBurst mode combines bursts of pulses at a GHz repetition rate inside a bigger packet of pulses at a MHz repetition rate.
To read the full paper detailing this research, entitled “Enhanced ablation efficiency for silicon by femtosecond laser microprocessing with GHz bursts in MHz bursts(BiBurst)”, click here.
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