Studying Hole Diffusion in InGaN Quantum Well Structures
Ternary nitride alloys, such as InGaN, are currently the materials of choice for light-emitting diodes (LEDs) operating in the visible and ultraviolet spectral range. Researchers from Vilniaus Universitetas / Vilnius University, UC Santa Barbara, and Centre National de la Recherche Scientifique applied the light-induced transient grating (LITG) technique to study the hole diffusion in InGaN quantum well (QW) structures, crucial for further development of LEDs.
Two components produced by Light Conversion were integral to the experimental setup. The PHAROS laser emits 250-fs-duration pulses at a 1030 nm fundamental wavelength at a 30 kHz repetition rate. The laser beam comprises pump and probe parts. The pump wavelength is tuned to 394 nm using an ORPHEUS optical parametric amplifier.
To read the paper, entitled “Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane (In,Ga)N Quantum Wells,” click here.
To request more information or a quotation for these or other Light Conversion products, contact IL Photonics.